| Product Overview |
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Gold Bumping technology is becoming more popular recently. High demand for LCD driver ICs keeps Gold Bumping and TCP lines very busy.
ASE’s Bumping plant II in Kaohsiung will commence mass-production in October and expected initial capacity is 10K wafer per month and then will ramp-up to 20K wafer per month at the end of Q4.
Gold bumped wafer will be applied on TCP (Tape Carrier Package), COG (Chip on Glass), COF(Chip on Film) package primarily for consumer products. It is designed to replace wire bond technology .The gold bumped chip will be mounted on the package through thermal compression method. As the requirement in high I/O, flex interconnection, thin, lightweight packaging increase, gold bumped wafers become more suitable to these portable products. |
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| Application |
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 Notebook
LCD Monitor
Mobil Phone
Digital Camera, PDA, Ink Printer. |
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| Standard Process/Materials |
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| Wafer Incoming |
WAFER :
- 6/8 INCH
- Al Pad: Al-Si-Cu, or Al-Cu
- Passivation: Nitride, Oxide, or PI |
| UBM Sputtering |
UBM: TiW, Au |
| Photo Patterning |
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| Au Plating |
Electro Plating: Au |
| Photo-resist Stripping |
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| Seed Layer Etching |
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| Annealing |
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| Design Guideline |
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| Wafer Size |
6", 8" |
| Minimum wafer thickness |
6"-625 µm/ 8"-725 m |
| Pad metal |
AI-Si-Cu, AL-Cu based |
| Wafer surface |
No inked dots |
| Pad surface |
No probe mark |
| Passivation |
Nitride, Oxide, polyimide |
| UBM |
Tiw/Au |
| Bump height |
15~20 µm |
| Minimumbump pitch |
45 µmpitch |
| Minimum spacing between bumps |
12 µm |
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