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Wirebond Fine Pitch Wire Bonding IC Feature Size (um) 0.18 0.13 0.09 0.065 0.045 Wire Bond Pad Pitch (um) (Single-In-Line) 60 50 45 40 35 Wire Bond Pad Pitch (um) (2 Row Staggered) 80/40 70/35 60/30 50/25 40/20 Wire Bond Pad Pitch (um) (Tri-Tier) 90/45 80/40 70/35 60/30 50/25 Wire Bond Pad Pitch (um) ( Quad-Tier ) 100/50 90/45 80/40 70/30 60/30 Wire Bond Pad Pitch (um) ( 5-Tier ) 100/50 90/45 80/40 70/30 60/30 • Leading-Edge Fine-Pitch Capabilities > In-Line: 40um, Staggered: 50um, Tri-Tier: 50um, Quad-Tier: 60um, 5-Tier : 70 um • Low k & Copper wafer capabilities available. Packaging Technology Overview -- SiP Package Item Available 2007 2008 2009 SiP SCSP Package Thickness (mm) (2/3/4 die stacked) 0.5/1.0/1.2 0.4/0.8/1.0 0.4/0.8/1.0 0.4/0.8/1.0 Number of Die 2/3/4/5/7 9 9 9 Hybrid (WB+FC) Eutectic Bump Lead free Bump Green Green PiP Package Thickness (mm) 1.4 1.4 1.2 1.2 Technology WB type FC+WB type FC+WB type FC+WB type PoP Bottom Package Height (mm) 1.0 Max 1.0 Max 0.9 Max 0.8 Max PKG Size (mm) 14X14 10X10~20X20 10X10~20X20 10X10~20X20 Technology WB FC+WB FC+WB FC+WB FBGA Min. Package Thickness (mm) 0.5 0.4 0.4 0.4 Max. Package Size (mm) 27x27 21x21 21x21 21x21 Wire Bond Technology Tri-tier Tri-tier Tri-tier Tri-tier Cu/Low-K Package Development Status   ASE engineering study Base on customer volume 2008 ASE Kaohsiung, All rights reserved. Terms of Use